4M x 16bit CMOS Dynamic RAM with Extended Data Out Others with the same file for datasheet: K4E641612C-45, K4E641612C-50, K4E641612C-60, K4E641612C-L, ...

This is a family x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh ...

Partname: K4E661612C-T45. Description: 4M x 16bit CMOS Dynamic RAM with Extended Data Out. Manufacturer: Samsung Electronic. Datasheet: PDF (884K).

T45 Datasheet. Part #: K4E641612C-T45. Datasheet: 884Kb/36P. Manufacturer: Samsung semiconductor. Description: 4M x 16bit CMOS Dynamic RAM with Extended ...

This 4Mx16 EDO Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.

Datasheets for 16BIT ; 228, K4E661612C-T45, 4M x 16bit CMOS Dynamic RAM with Extended Data Out, Samsung Electronic ; 229, K4E661612C-T50, 4M x 16bit CMOS Dynamic ...

4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns in 50-pin TSOP II package. Operational temperature range from 0°C to 70°C.

K4E641612C-T45, 4M x 16bit CMOS Dynamic RAM with ... K4E661612C, 4M x 16bit CMOS Dynamic RAM with ... K4E661612C-T45, 4M x 16bit CMOS Dynamic RAM with Extended Data ...

This is a family x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh ...

Part information ; K4E661612C, Unbuffered DIMM. Description = M366F0484CT1 4Mx64 DRAM Dimm Using 4Mx16,4K&8K Refresh,3.3V,EDO Mode Without Buffer ;; Density(MB) ...