Search Results

  1. www.alldatasheet.com › SAMSUNG › K4E661612C-50K4E661612C-50 Datasheet(PDF) - Samsung semiconductor

    K4E661612C-50 Datasheet (HTML) - Samsung semiconductor K4E661612C-50 Product details: DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS ...

    • K4E661612C-50 Download
    • 36 Pages
    • 884.02 Kbytes
    • K4E661612C-50

  2. html.alldatasheet.com › 766 › 3K4E661612C-50 datasheet(3/36 Pages) SAMSUNG

    K4E661612C-50 Datasheet(HTML) 3 Page - Samsung semiconductor : zoom in zoom out 3 / 36 page. CMOS DRAM. K4E661612C,K4E641612C. ABSOLUTE MAXIMUM RATINGS

  3. www.next.gr › components-datasheets › K4E661612C4M x 16bit CMOS Dynamic RAM with Extended Data Out

    K4E661612C,K4E641612C CMOS DRAM This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random ...

  4. www.datasheets.com › en › part-detailsSamsung Electronics | K4E661612C-LL-50 - Datasheet PDF & Tech ...

    Aug 24, 2021 · Samsung Electronics's K4E661612C-LL-50 is 4m x 16bit cmos dynamic ram with extended data out in the memory chips, dram chip category. Check part details, parametric & specs and download pdf datasheet from datasheets.com, a global distributor of electronics components.

  5. Videos

    View all

  6. testdig.digchip.com › 409 › K4E661612C-50K4E661612C-50 datasheet - 4M x 16bit CMOS Dynamic RAM with ...

    K4E661612C-50 4M x 16bit CMOS Dynamic RAM with Extended Data Out . DESCRIPTION. This is a family x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row.

  7. html.datasheetq.com › 3page › K4E661612C-50K4E661612C-50 Datasheet PDF - Samsung

    K4E661612C-50 Datasheet : 4M x 16bit CMOS Dynamic RAM with Extended Data Out, K4E661612C-50 PDF VIEW Download Samsung, K4E661612C-50 3 page Datasheet PDF, Pinouts, Data Sheet, Equivalent, Schematic, Cross reference, Obsolete, Circuits

  8. html.alldatasheet.com › 1023 › 4K4E661612C-50 datasheet(4/36 Pages) SAMSUNG

    CMOS DRAMK4E661612C,K4E641612C*Note :ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,address can be changed maximum once within one EDO mode cycle time,tHPC.DC AND OPERATING CHARACTERISTICS ...