Part number, K4E641611B-50. Category, Memory => DRAM => Async DRAM => 64 Mb. Description, Description = K4E641611B 4M X 16bit CMOS Dynamic RAM With Extended ...
This 4Mx16 EDO Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability.
Compare KM416V4000C-S45 by Samsung Semiconductor vs K4E641611B-TC600 by Samsung Semiconductor. View differences in part data attributes and features.
K4E641611B-45 : Description = K4E641611B 4M X 16bit CMOS Dynamic RAM With Extended Data Out ;; O K 4 E 641611 B-45 · K4E641611B-50 : Description = K4E641611B ...
K4E641611B-TL50 Samsung Electronic Components ICs. Buy K4E641611B-TL50 ... K4E641611B-TL50 Samsung PCB Footprint and Symbol. K4E641611B-TL50 Samsung EEG.
This 4Mx16 EDO Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability.
K4E661611B-50 is available in stock. Submit a quote for electrical connector part K4E661611B-50, Description = M364e0484bt0 Edo Mode 4Mx64 Dram Dimm Using ...
Samsung Semiconductor, KM416V4100C-SL6 vs K4E641611B-TC45 · KM416V4100C-S5, Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50, Samsung ...
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(Hot offer) K4E641611B-TC50Supply IC chips Operational amplifier MSOP8 TSSOP THS4150IDGKR 4150ATMEGA169PA-AU(DHX Components Ic Chip Integrated Circuit) ...
... 50,60 ; Package = 50TSOP2 ; Power = Normal ; Production Status = Eol ; Comments = -; K4E641611B-50 Samsung - K4E641611B 4M X 16bit CMOS Dynamic RAM With ...