This is a family x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called ...
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Others with the same file for datasheet: K4E160411D-B ...
Download Samsung Semiconductor, Inc. K4E170412D-B pdf datasheet file.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Manufacturer: Samsung Electronic. Package: SOJ. Pins: 24.
We're pleased to announce that part number K4E170412D-B is now available and in stock. This part is described as Other Connectors manufactured by Samsung.
... B K4E170411D-F K4E170412D-F K4E170412D-B. Description, 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit ...
K4E170412D. Samsung. 4M x 4Bit CMOS Dynamic RAM. K4E170411D, K4E160411D K4E170412D ... FEATURES • Part Identification - K4E170411D-B(F) (5V, 4K Ref.) - K4E160411D ...
It may be used as main memory unit for high level computer, microcomputer and personal computer. • Part Identification. - K4E170411D-B(F) (5V, 4K Ref.).
K4E170412D-B, 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic. 220, K4E170412D-F, 4M x 4 bit CMOS ...
