4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Others with the same file for datasheet:

This is a family x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called ...

Partname: K4E160412D-F. Description: 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.

It may be used as main memory unit for high level computer, microcomputer and personal computer. FEATURES Part Identification - K4E170411D-B(F) (5V, 4K Ref.) - ...

K4E160411D - 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Extended Data Out ...

... Download K4E160811D datasheet from. Samsung Electronic, pdf 258 kb. K4E160412D-F, View K4E160811D to our catalog, K4E160811D-B. © 2024 - Datasheet Catalog com.

K4E160412D-B, 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic. 216, K4E160412D-F, 4M x 4 bit CMOS ...

K4E170412D, K4E160412D. This is a family of 4.194,304 x 4 ... K4E160412D 3.3V. • Performance Range. Speed. tRAC ... F: 300mil 26(24) TSOP II. • K4E17(6)0411(2)D-B.

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Datasheets for SAMSUNG ELECTRONIC ; 536, K4E160412D-F · 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. ; 537 ...