This 4Mx4 EDO DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be ...
Partname: K4E160411D-F ; Description: 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. ; Manufacturer: Samsung Electronic.
This is a family x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called ...
K4E160411D - 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Extended Data Out ...
DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells ...
K4E160411D-B, 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 533, K4E160411D-F, 4M x 4 bit CMOS dynamic RAM with ...
We're pleased to announce that part number K4E160411D-F is now available and in stock. This part is described as Other Connectors manufactured by Samsung. You ...
Datasheets for 4 BIT ; 214, K4E160411D-F · 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. Samsung Electronic ; 215 ...
K4E160411D-BL60, 621853, 03; 12; 13; 2008br, Samsung, SOJ; SOJ24br; new and original. K4E160411D-F, 9052, 0227, Samsung, TSOP. K4E160411D-FC, 621853, 12; 2008.
