4M x 4Bit CMOS Dynamic RAM with Extended Data Out Others with the same file for datasheet: K4E160412D, K4E170411D, K4E170412D · K4E160411D datasheet pdf ...

This 4Mx4 EDO DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be ...

Partname: K4E160411D-B ; Description: 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. ; Manufacturer: Samsung Electronic.

This is a family x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called ...

K4E160411D - 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Extended Data Out ...

DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells ...

K4E160411D-B, 16577, 14, Samsung, SOJ. K4E160411D-BC50, 621853, 03; 12; 12-13; 13br; 2002; 2008; 2016, Samsung, SOJ; SOJ24br; new and original. K4E160411D-BC60 ...

K4E160411D-B, 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. Samsung Electronic. 214, K4E160411D-F, 4M x 4 bit CMOS ...

Datasheets for SAMSU ; 532, K4E160411D-B · 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. ; 533, K4E160411D-F · 4M x 4 bit ...