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128Mbit DDR SDRAM, K4D28163HD-TC50 Datasheet, K4D28163HD-TC50 circuit, K4D28163HD-TC50 data sheet : SAMSUNG, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
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- K4D28163HD-TC50
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K4D28163HD-TC50 K4D28163HD-TC60 Max Freq. 200MHz 166MHz Max Data Rate SSTL_2 66pin TSOP-II Interface Package The is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized x 2.097,152 words by 16 bits, fabricated with SAMSUNG ' s high performance CMOS technology.
K4D28163HD 128M DDR SDRAM - 3 - Rev. 1.4(Aug. 2002) The K4D28163HD is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2.097,152 words by 16 bits, fabricated with SAMSUNG s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 1.1GB/s/chip.
K4D28163HD-TC50 Datasheets | DRAMs DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, TSOP2-66 By apogeeweb, K4D28163HD-TC50, K4D28163HD-TC50 Datasheet,K4D28163HD-TC50 PDF,Samsung Semiconductor
Full datasheet K4D28163HD-TC50 manufactirer Samsung, DDR SDRAM (128 Мб) 128 Mb. Archive 1.687.043 components : Datasheets Cross-reference Online-stock: ChipFind: