Compare HY23V64200M-100 by undefined vs K3N7V1000B-YC10 by undefined. View differences in part data attributes and features.
Compare K3N7V1000B-YC10 by undefined vs KM23V64005ATY-10 by undefined. View differences in part data attributes and features.
K3N7V1000B, 64M bit. Description = K3N7V1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ... K3N7V1000B-YC10, -, Samsung Semiconductor, Inc. K3N7V1000B-YC12, -, Samsung ...
The is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either x 8 bit(byte mode) x 16 bit(word mode) ...
K3N7V1000B-YC10 : 64M bit Description = K3N7V1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ;; Organization = 8Mx8,4Mx16 ;; Voltage(V) = 3.3 ;; Speed(ns) = 100 ...
K3N7V1000B-YC10 · K41016334SZM0J105 · K41063154SUM0J143 · K3TE-A314 · K40553C000J0G · K40853C000J0G · K41053C000J0G · K409538000J0G · K41040223SKM0G079
K3N7V1000B-YC10 : 64M bit Description = K3N7V1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ;; Organization = 8Mx8,4Mx16 ;; Voltage(V) = 3.3 ;; Speed(ns) = 100 ...
K3N7V1000B-YC10 Samsung - K3N7V1000B 64M-Bit (8Mx8 / 4Mx16) CMOS Mask ROM ; Organization = 8Mx8,4Mx16 ; Voltage(V) = 3.3 ; Speed(ns) = 100 ; Package = 44SOP ...
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Features · cULus, RoHS · 100,000 amp peak current rating provides all mode protection against severe transients · Low clamping levels for more effective protection ...
K3N3V3000D-YC10 K3N3V3000D-YE10 K3N3V6000D-DC10 ... K3N6C1000E-YC10 K3N6C1000E-YC12 K3N6C1000F-C10 K3N6C1000F ... K3N7V1000B-GC10 K3N7V1000B K3N7V1000B-GC12
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