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  1. Item Read Cycle Time Address Access Time Output Enable Access Time Output Disable to Output High-Z Output Hold from Address Change Symbol tRC tAA tOE tDF tOH 0 K3N7C4000M-DC12 Min Max K3N7C4000M-DC15 Min Max Unit ns. NOTE : tDF is defined as the time at which the outputs achieve the open circuit condition and is not referenced OH or VOL level.

  2. Item Read Cycle Time Address Access Time Output Enable Access Time Output Disable to Output High-Z Output Hold from Address Change Symbol tRC tAA tOE tDF tOH K3N7C4000C-DC10 (CL=50pF) Min Max K3N7C4000C-DC12 (CL=100pF) Min Max K3N7C4000C-DC15 (CL=100pF) Min Max ns Unit

  3. Full datasheet K3N7C4000M-DC12 manufactirer Samsung, Mask ROM (Стандартный) Standard Archive 1.687.043 components Datasheets Cross-reference Online-stock

  4. K3N7C4000B-DC12 Description = K3N7C4000B 64M-Bit (4M X 16) CMOS Mask ROM ;; Organization = 4Mx16 ;; Voltage(V) = 5.0 ;; Speed(ns) = 100 ;; Package = 42DIP ;; Current (mA/uA) = 70 ;; Production Status = Mass Production FEATURES. x 16 bit organization Fast access time : CL=100pF Supply voltage : single +5V Current consumption Operating : 70mA(Max.)

  5. Item Read Cycle Time Address Access Time Output Enable Access Time Output Disable to Output High-Z Output Hold from Address Change Symbol tRC tAA tOE tDF tOH K3N7C4000C-DC10 (CL=50pF) Min Max K3N7C4000C-DC12 (CL=100pF) Min Max K3N7C4000C-DC15 (CL=100pF) Min Max ns Unit

  6. Item Read Cycle Time Address Access Time Output Enable Access Time Output Disable to Output High-Z Output Hold from Address Change Symbol tRC tAA tOE tDF tOH 0 K3N7C3000M-DC12 Min Max K3N7C3000M-DC15 Min Max Unit ns. NOTE : tDF is defined as the time at which the outputs achieve the open circuit condition and is not referenced to VOH or VOL level.

  7. Electronic components catalog and datasheet archive K3N7C4000M-DC Samsung. Suppliers; Catalog; Datasheets; Cross-reference ... K3N7C4000M-DC12, K3N7C4000M-DC15 ...