The K3N3C6000D-DC is a fully static mask programmable. ROM organized 262,144 x 16 bit. It is fabricated using silicon gate CMOS process technology.

K3N3C6000D-DC12 : Description = K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ;; Organi K 3 N 3 C 6000 D-DC 12 · K3N3S3000D : 4m-bit (512k X 8) ...

It is fabricated using silicon gate CMOS process technology. This device operates with a 5V single power supply, and all inputs and outputs are TTL compatible.

K3N3C6000D-DC12 : 4M bit Description = K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ;; Organization = 256Kx16 ;; Voltage(V) = 5.0 ;; Speed(ns) ...

We're pleased to announce that part number K3N3C6000D-DC is now available and in stock. This part is described as Other Connectors manufactured by Samsung.

We're pleased to announce that part number K3N3C6000D-DC10 is now available and in stock. This part is described as Other Connectors manufactured by Samsung.

Datasheets for D-DC ; 302, G903CD-DC12, Relay. Coil voltage 12 VDC. Contact arrangement 1C. Cover: dust cover. Insulation class B. · Global Components & Controls.

K3N3C6000D-DC12 : 4M bit Description = K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ;; Organization = 256Kx16 ;; Voltage(V) = 5.0 ;; Speed(ns) ...

K3N3C6000D-DC12. Min. 120. 120. 120. 60. 20. Max. Unit. ns. ns. ns. ns. ns. ns. TIMING ... K3N3C6000D-DC12. 描述, MASK ROM, 256KX16, 100ns, CMOS, PDIP40, 0.600 ...

Get a free quote within a few minutes for the computer memory part K3N3C6000D-DC12 manufactured by Samsung. K3N3C6000D-DC12 under Otp Memory Ics is ready to