The K3N3C6000D-DC is a fully static mask programmable. ROM organized 262,144 x 16 bit. It is fabricated using silicon gate CMOS process technology.
It is fabricated using silicon gate CMOS process technology. This device operates with a 5V single power supply, and all inputs and outputs are TTL compatible.
K3N3C6000D-DC : Description = K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ;; Organi K 3 N 3 C 6000 D-DC · K3N3C6000D-DC08 : Description = ...
K3N3C6000D-DC08 : 4M bit Description = K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ;; Organization = 256Kx16 ;; Voltage(V) = 5.0 ;; Speed(ns) ...
Intitulé de K3N3C6000D-DC08: Description = K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ;; Organization = 256Kx16 ;; Voltage(V) = 5.0 ; ...
K3N3C6000D-DC08 ; JESD-30 代码, R-PDIP-T40 ; JESD-609代码, e0 ; 长度, 52.42 mm ; 内存密度, 4194304 bit ; 内存集成电路类型, MASK ROM.
K3N3C6000D-DC08 : 4M bit Description = K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ;; Organization = 256Kx16 ;; Voltage(V) = 5.0 ;; Speed(ns) ...
Duration: 8:31
Posted: Jul 7, 2011
Posted: Jul 7, 2011
Missing: K3N3C6000D- | Show results with:K3N3C6000D-
K3N3C6000D-DC10 · K3N3C6000D-DC08 · K3N3C6000D-DC12. 描述, MASK ROM, 256KX16, 100ns, CMOS, PDIP40, 0.600 INCH, DIP-40, MASK ROM, 256KX16, 80ns, CMOS, ...
K3N3C6000D-DC08 Samsung - K3N3C6000D 4M-Bit (256K X 16) CMOS Mask ROM (EPROM TYPE) ; Organization = 256Kx16 ; Voltage(V) = 5.0 ; Speed(ns) = 80 ; Package ...