JANSH2N7380 Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.1850 ohms ; Package Type: HERMETIC ...

JANSH2N7380. IRHY3130CM 300 kRads(Si). 0.18Ω 14.4A. JANSF2N7380. IRHY5130CM 500 ... (JANSH2N7380). Radiation Characteristics. Table 2. Typical Single Event Effect ...

... Download JANSH2N7270U datasheet from. International Rectifier, pdf 314 kb. JANSH2N7270, View JANSH2N7270U to our catalog, JANSH2N7380. © 2024 - Datasheet ...

Part No. IRHY7130CM IRHY4130CM IRHY8130CM IRHY3130CM JANSF2N7380 JANSG2N7380 JANSH2N7380 JANSR2N7380. Description, RADIATION HARDENED POWER MOSFET THRU-HOLE (TO ...

R4. N. 100. 1MRad. 3. TO257. JANTXV / JANSH2N7380. MIL-PRF-19500/614. 21 IRHC8150. R4. N. 100. 1MRad. 5. Chip. 22 IRH8150. R4. N. 100. 1MRad. 5. TO3. 23 ...

JANSH2N7380 ; 供应分类: 半导体器件 ; 制作商: INTERNATIONAL RECTIFIER CORPORATION ; 执行标准: MIL-PRF-19500 ; 标题描述: Semiconductor Devices, General Specification ...

Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information.

Part No. JANSH2N7380 JANSR2N7380 ; Description, HEXFET Transistor(HEXFET 晶体 ; File Size, 98.02K / 8 Page. View it Online.

JANSH2N7380 : 8 A, 100 V, 0.185 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 ...