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View Substitutes. Order today, ships today. IXTM5N100 – N-Channel 1000 V 5A (Tc) 180W (Tc) Through Hole TO-204AA (IXTM) from IXYS. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
Standard. Power MOSFET. IXTH / IXTM 5N100A. N-Channel Enhancement Mode. Symbol. Test Conditions. Maximum Ratings. V. DSS. V. DGR. T. J. = 25°C to 150°C. T. J. = 25°C to 150°C; R. = 1 MΩ. GS. 1000. V. GS. V. GSM. Continuous. Transient. ±20.
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View datasheets for IXTH/IXTM 5N100(A) by IXYS and other related components here.
Standard Power MOSFET, IXTM5N100 Datasheet, IXTM5N100 circuit, IXTM5N100 data sheet : IXYS, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
Part #: IXTM5N100. Download. File Size: 312Kbytes. Page: 2 Pages. Description: isc N-Channel MOSFET Transistor. Manufacturer: Inchange Semiconductor Company Limited.
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IXTM5N100 MOSFET. Datasheet pdf. Equivalent. Type Designator: IXTM5N100. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation (Pd): 180 W. Maximum Drain-Source Voltage |Vds|: 1000 V. Maximum Gate-Source Voltage |Vgs|: 20 V. Maximum Gate-Threshold Voltage |Vgs (th)|: 4.5 V. Maximum Drain Current |Id|: 5 A
