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  1. IXTM 12N90. N-Channel Enhancement Mode. Symbol. Test Conditions. Maximum Ratings. V. DSS. V. DGR. T. = 25°C to 150°C. J. T. = 25°C to 150°C; R. = 1 MΩ. J. GS. 900. V. GS. V. GSM. Continuous. Transient. ±20. ±30. V. I. D25.

  2. isc N-Channel MOSFET Transistor, IXTM12N90 Datasheet, IXTM12N90 circuit, IXTM12N90 data sheet : ISC, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.

  3. Features. International standard packages. Low R DS (on) HDMOSTM process. Rugged polysilicon gate cell structure. Low package inductance (< 5 nH) - easy to drive and to protect.

  4. IXTM12N90 IXYS MOSFET 12 Amps 900V 0.9 Ohms Rds datasheet, inventory, & pricing.

  5. Part #: IXTM12N90. Download. File Size: 102Kbytes. Page: 4 Pages. Description: MegaMOS FET. Manufacturer: IXYS Corporation.

    • IXTM12N90 Download
    • 4 Pages
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    • IXTM12N90
  6. IXTM12N90 IXYS MOSFET 12 Amps 900V 0.9 Ohms Rds datasheet, inventory & pricing.

  7. Heat Shrink Tubing. Labels, Labeling. Protective Hoses, Solid Tubing, Sleeving. Solder Sleeve. Spiral Wrap, Expandable Sleeving. Wire Ducts, Raceways. See All. Back. Accessories. ARINC Inserts. Contacts. DIN 41612. Hard Metric, Standard.