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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. Features. UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode. New IGBT design provides tighter parameter distribution and higher efficiency than previous generations.
IRG4PH50U Product details. Features. • UltraFast: Optimized for high operating. frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode. • New IGBT design provides tighter. parameter distribution and higher efficiency than. previous generations. • Optimized for power conversion; SMPS, UPS.
View IRG4PH50U by Infineon Technologies datasheet for technical specifications, dimensions and more at DigiKey.
INSULATED GATE BIPOLAR TRANSISTOR. Features. UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode. New IGBT design provides tighter parameter distribution and higher efficiency than previous generations. Optimized for power conversion; SMPS, UPS and welding.
IRG4PH50UPBF Infineon Technologies IGBT Transistors 1200V ULTRAFAST 5-40KHZ DSCRETE IGBT datasheet, inventory, & pricing.
irg4ph50u: 134kb / 8p: insulated gate bipolar transistor(vces=1200v, vce(on)typ.=2.78v, @vge=15v, ic=24a) irg4ph50kd: 224kb / 10p: insulated gate bipolar transistor with ultrafast soft recovery diode(vces=1200v, vce(on)typ.=2.77v, @vge=15v, ic=24a) irg4ph50k: 92kb / 6p: insulated gate bipolar transistor(vces=1200v, vce(on)typ.=2.77v, @vge=15v ...
Repetitive rating; pulse width limited by maximum junction temperature. Pulse width ≤ 80μs; duty factor ≤ 0.1%. Pulse width 5.0μs, single shot. 0.1. 10. f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency. (Load Current = IRMS of fundamental) Fig. 2 - Typical Output Characteristics.
