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IPD,IPSH4N03LA G Datasheet by Infineon Technologies. View All Related Products | Download PDF Datasheet. IPDH4N03LA G IPSH4N03LA G. Opti MOS®2 Power-Transistor. Features. • Ideal for high-frequency dc/dc converters. • Qualified according to JEDEC 1) for target applications.
Opti MOS®2 Power-Transistor. Features. • Ideal for high-frequency dc/dc converters. • Qualified according to JEDEC 1) for target applications. • N-channel, logic level. • Excellent gate charge x RDS (on) product (FOM) • Superior thermal resistance. • 175 °C operating temperature. • Pb-free lead plating; RoHS compliant.
OPTIMOS 2 POWER - TRANSISTOR, IPSH4N03LA Datasheet, IPSH4N03LA circuit, IPSH4N03LA data sheet : INFINEON, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
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IPSH4N03LA OPTIMOS 2 POWER - TRANSISTOR - Infineon Technologies IPSH4N03LAG OPTIMOS 2 POWER - TRANSISTOR - Infineon Technologies @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
Infineon Technologies AG's IPSH4N03LA G is a trans mosfet n-ch 25v 90a 3-pin(3+tab) to-251. in the fet transistors, mosfets category. Check part details, parametric & specs and download pdf datasheet from datasheets.com, a global distributor of electronics components.
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Order today, ships today. IPSH4N03LA G – N-Channel 25 V 90A (Tc) 94W (Tc) Through Hole PG-TO251-3-11 from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
