Partname: IC62VV25616LL-55B. Description: 55ns; 1.8V; 256K x 16 ultra low power CMOS static RAM. Manufacturer: Package: BGA. Pins: 44. Oper. temp.: 0 to 70.
... Integrated Circuit Solution Inc, pdf 233 kb. IC62VV25616LL-100T, View IC62VV25616LL-100TI to our catalog, IC62VV25616LL-55B. © 2024 - Datasheet Catalog com.
The ICSI IC62LV25616L and IC62LV25616LL are low-power, 4.194,304 bit static RAMs organized as 262,144 words by 16 bits. They are fabricated usingICSIs high- ...
FEATURES. • High-speed access times: 55, 70, 100 ns. • CMOS low power operation. ICC1=10mA (typical)* operating. ISB2=1µA (typical)* CMOS standby.
$3.25
Order today, ships today. IS62WV25616BLL-55BI-TR – SRAM - Asynchronous Memory IC 4Mbit Parallel 55 ns 48-TFBGA (6x8) from ISSI, Integrated Silicon Solution ...
Datasheets for 55B ; 805, IC62VV25616LL-55BI, 256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM ; 806, IC62VV5128L-55B, 55ns; 1.8V; 512K x 8 ultra low Vcc CMOS ...
Aug 25, 2014 · 55. 70. Icc. Vdd Dynamic Operating Vdd = Max.,. Com. 40. 35. mA. Supply Current ... 55 ns. 70 ns. Symbol Parameter. Min. Max. Min. Max. Unit twc.
Order today, ships today. IS62WV25616EBLL-55TLI – SRAM - Asynchronous Memory IC 4Mbit Parallel 55 ns 44-TSOP II from ISSI, Integrated Silicon Solution Inc.
$4.40
Specifications ; Memory Size: 4 Mbit ; Organization: 256 k x 16 ; Access Time: 55 ns ; Maximum Clock Frequency: 18 MHz.
IC62VV25616LL-100TI : 70ns; 1.8V; 256K X 16 Ultra Low Power CMOS Static RAM IC 62 VV 25616 LL-100 TI · IC62VV25616LL-55B : 55ns; 1.8V; 256K X 16 Ultra Low ...