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HYM364025GS-50 Product details The HYM 364025S/GS-50/-60 is a 16 MByte DRAM module organized as 4 194 304 words by 36-Bit in a 72-pin single-in-line package comprising eight HYB 5117405BJ 4M × 4 EDO-DRAMs and four HYB 514105BJ 4M x 1 EDO-DRAMs in 300 mil wide SOJ-packages mounted together with ceramic decoupling capacitors on a PC board.
Apr 23, 2005 · HYM364025GS-50: Manufacturer Siemens: Title 4M x 36-Bit EDO - DRAM Module: Description EDO-DRAM Module (access time 50 ns) EDO-DRAM Module (access time 60 ns) EDO-DRAM Module (access time... Features on the HYM 364025S/GS-50/-60 dictates the use of early write cycles.
The HYM 364025S/GS-50/-60 is a 16 MByte DRAM module organized as 4 194 304 words by 36-Bit in a 72-pin single-in-line package comprising eight HYB 5117405BJ 4M × 4 EDO-DRAMs and four HYB 514105BJ 4M x 1 EDO-DRAMs in 300 mil wide SOJ-packages mounted together with
HYM364025GS-50 datasheet, HYM364025GS-50 pdf, HYM364025GS-50 data sheet, datasheet, data sheet, pdf, Infineon, 4M x 36 Bit EDO DRAM Module with Parity
Semiconductor Group7HYM 364025S/GS-50/-604M× 36-Bit EDO-ModuleAC Characteristics 5)6)TA = 0 to 70 °C,VCC = 5 V ± 10 %, tT = 2 nsParameterSymbol Datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
After assembly onto the board, a further set of electrical tests is performed. The speed of the module can be detected by the use of four presence detect pins. The common I/O feature on the HYM 364025S/GS-50/-60 dictates the use of early write cycles.
The HYM 364025S/GS-50/-60 is a 16 MByte DRAM module organized as 4 194 304 words by 36-Bit in a 72-pin single-in-line package comprising eight HYB 5117405BJ 4M × 4 EDO-DRAMs and four HYB 514105BJ 4M x 1 EDO-DRAMs in 300 mil wide SOJ-packages mounted together with ceramic decoupling capacitors on a PC board.
