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The HMBT5401 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage (BVCEO=150V@ IC=1mA) • Complements to NPN Type HMBT5551
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MMBT5401LT1 - High Voltage Transistor PNP Silicon. MMBT5401L, SMMBT5401L, NSVMMBT5401L. High Voltage Transistor. PNP Silicon. Features. S and NSV Prefix for Automotive and Other Applications Requiring. •. Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable.
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MMBT5401 — PNP Epitaxial Silicon Transistor www.onsemi.com 2 Thermal Characteristics(3) Values are at TA = 25°C unless otherwise noted. Note: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
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Max. Operating Junction Temperature (Tj): 150 °C. Transition Frequency (ft): 100 MHz. Collector Capacitance (Cc): 6 pF. Forward Current Transfer Ratio (hFE), MIN: 60. Noise Figure, dB: - Package: SOT-23. HMBT5401 Datasheet (PDF) ..1. Size:38K hsmc. hmbt5401.pdf.
November 2014. This device is designed as a general-purpose amplifier and switch for applications requiring high voltage. Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-ble above the recommended operating conditions and stressing the parts to these levels is not recommended.
Description: Bipolar Transistors - BJT TRANS PNP 160V 0.6A 0.3W SOT-23. Datasheet: MMBT5401-HF Datasheet (PDF) ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model. Compare Product. Add To Project | Add Notes. Availability. Stock: Non-Stocked. Factory Lead-Time: Request Delivery Quote.
Epitaxial Planar Die Construction. Complementary NPN Type - MMBT5551. Ideal for Low Power Amplification and Switching. Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.