Search Results

  1. Description. Features. This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

  2. Order today, ships today. HAF2015RJ-EL-E – Power Switch/Driver 1:1 N-Channel 2A 8-SOP from Renesas Electronics Corporation. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

  3. HAF2015RJ Silicon N Channel MOS FET Series Power Switching REJ03G1141-0300 Rev.3.00 Aug 27, 2007 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down

  4. Renesas' thermal FETs offer built-in over temperature protection for body, lighting and heater, powertrain, and 24V battery system applications.

  5. Silicon N Channel MOSFET Series Power Switching, HAF2015RJ Datasheet, HAF2015RJ circuit, HAF2015RJ data sheet : RENESAS, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.

    • HAF2015RJ Click to view
    • 10 Pages
    • 142.99 Kbytes
    • HAF2015RJ
  6. Part #: HAF2015RJ. Download. File Size: 67Kbytes. Page: 10 Pages. Description: SILICON N CHANNEL MOS FET SERIES POWER SWITCHING. Manufacturer: Hitachi Semiconductor.

  7. Find the best pricing for Renesas HAF2015RJ-EL-E by comparing bulk discounts from 4 distributors. Octopart is the world's source for HAF2015RJ-EL-E availability, pricing, and technical specs and other electronic parts.