The H2N6718V is designed for general purpose medium power amplifier and switching.
H2N6718V Datasheet, Equivalent, Cross Reference Search. Type Designator: H2N6718V Material of Transistor: Si Polarity: NPN
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition ...
HI-SINCERITY MICROELECTRONICS CORP. H2N6718V NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6616 Issued Date : 1993.09.24 Revised Date : 2006.02.20 Page No.
2N6718V Datasheet. Part #: H2N6718V. Datasheet: 39Kb/4P. Manufacturer: Hi-Sincerity Mocroelectronics. Description: NPN EPITAXIAL PLANAR TRANSISTOR.
H2N6718V (Hi-Sincerity). Electronic component documentation (datasheet) «H2N6718V» (Bipolar), manufacturer Hi-Sincerity. Download datasheet file: Datasheet ...
The H2N6718V is designed for general purpose medium power amplifier and ... H2N6718V. HSMC Product Specification. TO-126ML Dimension. Important Notice: • All ...
2N6718 ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * Gain = 0.5 Amp * Ptot=1 Watt. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base ...