Description. The H11AA814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a.

The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

onsemi's H11A817A.300W is a dc-in 1-ch transistor dc-out 4-pin pdip black. in the photocouplers, transistor and photovoltaic output photocouplers category.

The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor a 4-pin dual in-line package.

The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor a 4-pin dual in-line package. FEATURES.

Part #: H11A817A. Download. File Size: 527Kbytes. Page: 11 Pages. Description: 4-Pin Phototransistor Optocouplers. Manufacturer: Fairchild Semiconductor.

Part Number, H11A817A ; Manufacturer, Fairchild Semiconductor (www.fairchildsemi.com) ; Note, 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS ; Function, Optocouplers ...

H11AA814: 20-300% H11A817: 50-600%. H11AA814A: 50-150% H11A817A: 80-160%. H11A617A: 40%-80% H11A817B: 130-260%. H11A617B: 63%-125% H11A817C: 200-400%. H11A617C ...

H11A817A: 80-160%. H11A817B: 130-260%. H11A817C ... Peak forward current (1 µs pulse, 300 pps) . . . . . . . . . ... H11A817A. CTR. 80. 160. %. H11A817B. CTR. 130.

Compare H11A817A.300 by undefined vs FOD817AW by undefined. View differences in part data attributes and features.