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H11A817A from www.mouser.com
H11A817A onsemi / Fairchild Transistor Output Optocouplers PHOTO TRANS datasheet, inventory, & pricing.
Description. The H11AA814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a.
H11A817A from www.digikey.my
Order today, ships today. H11A817A – Optoisolator Transistor Output 5300Vrms 1 Channel 4-DIP from onsemi. Pricing and Availability on millions of electronic ...
H11A817A from www.alldatasheet.com
Part #: H11A817A. Download. File Size: 527Kbytes. Page: 11 Pages. Description: 4-Pin Phototransistor Optocouplers. Manufacturer: Fairchild Semiconductor.
onsemi's H11A817A.SD is a dc-in 1-ch transistor dc-out 4-pin pdip smd black t/r. in the photocouplers, transistor and photovoltaic output photocouplers ...
The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor a 4-pin dual in-line package. FEATURES.
H11A817A from www.alldatasheet.com
The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
H11A817A from www.ibselectronics.hk
Product Details ; Case/Package. DIP ; Mount. Through Hole ; Number of Pins. 4 ; Collector Emitter Saturation Voltage. 200 mV ; Collector Emitter Voltage (VCEO). 70 V.
TOTAL PACKAGE. OUTPUT TRANSISTOR. Storage temperature . . . . . . . . . . . . . . . . .-55° to 150° C. Power dissipation (25° C ambient) . . . . .150 mW.
H11A817A from www.allaboutcircuits.com
Technical Specifications ; Collector Emitter Saturation Voltage, 200 mV ; Collector Emitter Voltage (VCEO), 70 V ; Current Transfer Ratio, 160 % ; Fall Time, 18 µs.