Description. The H11AA814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a.
onsemi's H11A817A.SD is a dc-in 1-ch transistor dc-out 4-pin pdip smd black t/r. in the photocouplers, transistor and photovoltaic output photocouplers ...
The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor a 4-pin dual in-line package. FEATURES.
TOTAL PACKAGE. OUTPUT TRANSISTOR. Storage temperature . . . . . . . . . . . . . . . . .-55° to 150° C. Power dissipation (25° C ambient) . . . . .150 mW.