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H11A817D: 300-600%. H11A617D: 160%-320%. □ C-UL, UL and VDE approved. □ High input-output isolation voltage of 5000Vrms. □ Minimum BVCEO of 70V guaranteed.
H11A617.300 from www.alldatasheet.com
The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
300 .300 VDE 0884. 300W .300W VDE 0884, 0.4" Lead Spacing. 3S .3S VDE 0884, Surface Mount. 3SD .3SD VDE 0884, Surface Mount, Tape & Reel. 1. 2. 6. 4. 3. 5.
The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor a 4-pin dual in-line package.
H11A617.300W (Fairchild). Electronic component documentation (datasheet) «H11A617.300W» manufacturer Fairchild. Download datasheet file: ...
$0.82 In stock
H11A617B300 4-DIP (0.300", 7.62mm) OPTOCOUPLER TRANS-OUT 4-DIP ; Voltage - Output, 70V ; Current - Output / Channel, 50mA ; Current - DC Forward (If), 50mA ; Vce ...
The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor a 4-pin dual in-line package.
300 300W 3S 3SD Order Entry .S .SD .W .300W .3S .3SD MARKING INFORMATION Description Surface Mount Lead Bend Surface Mount Tape and reel. Lead Spacing VDE ...
RUB 16.50
DIP DIP4 100PCS H11A617A H11A617B H11A617C H11A617D 617 H11A617 High quality ; Compatible Brand/ModelNone ; Brand NameMOSLEADER ; OriginMainland China ; SizeDIP-4 ...