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Part #: GT25Q102. Download. File Size: 152Kbytes. Page: 6 Pages. Description: N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS). Manufacturer: Toshiba Semiconductor.
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Bipolar Small-Signal Transistors, GT25Q102 Datasheet, GT25Q102 circuit, GT25Q102 data sheet : TOSHIBA, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
Silicon N Channel IGBT High Power Switching Applications, GT25Q102 Datasheet, GT25Q102 circuit, GT25Q102 data sheet : TOSHIBA, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
GT25Q102. High Power Switching Applications. Unit: mm. The 3rd Generation. Enhancement-Mode. High Speed: tf = 0.32 μs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C) JEDEC. JEITA. ―. TOSHIBA. 2-21F2C. Weight: 9.75 g (typ.) Electrical Characteristics (Ta = 25°C) Rise time. tr. Inductive Load. 0.10 .
GT25Q102 Series Discrete Semiconductors are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for GT25Q102 Series Discrete Semiconductors.
Buy GT25Q102 - Toshiba - IGBT, 25 A, 2.7 V, 200 W, 1.2 kV, TO-3P, 3 Pins. element14 Singapore offers special pricing, same day dispatch, fast delivery, wide inventory, datasheets & technical support.