Long wavelength type (up to 2.1 µm). Features l Cut-off wavelength: 2.1 µm l 3-pin TO-18 package: low price l TE-cooled type TO-8 package: low dark current

Full datasheet G5852-11 manufactirer Hamamatsu, Фотодиоды Photodiodes.

The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor. High BVCEO 6 -Minimum 80 V High current transfer ...

Max. (nA). (MHz). (pF). (MΩ) (cm·Hz1/2/W) (W/Hz1/2). G8422-03. 55. 550. 100. 8. 0.9. 1.5 × 10-13. G8422-05. 125. 1250. 80. 20. 0.3. 2.5 × 10-13. G8372-01.

PHOTODIODE InGaAs PIN photodiode G8422/G8372/G5852 series Long wavelength type (up to 2.1 µm) Features Applications l Cut-off wavelength: 2.1 µm l 3-pin ...

Partname: G5852-11. Description: Reverse voltage:2V; spectral response range:0.9-2.1um; InGaAs PIN photodiode: long wavelength type (up to 2.1um).

Apr 1, 2001 · Max. (nA). (MHz). (pF). (MΩ). (cm·Hz1/2/W) (W/Hz1/2). G8422-03. 55. 550. 100. 8. 0.9. 1.5 × 10-13. G8422-05. 125. 1250.

... G5852-21 datasheet. G5852-21 manufactured by: Hamamatsu Corporation · InGaAs PIN photodiode. Others with the same file for datasheet: G5852-103, G5852-11, G5852 ...

PHOTODIODE InGaAs PIN photodiode G8422/G8372/G5852 series Long wavelength type (up to 2.1 µm) Features Applications l Cut-off wavelength: 2.1 µm l 3-pin ...