s: Capacitance: 820pF ; Voltage - Rated: 200V ; Tolerance: ±1% ; Package / Case: 1206 (3216 Metric) ; Temperature Coefficient: C0G, NP0 ; Packaging: Tape & Reel ...
Buy the MICROSEMI G21100B1EB1S from Elite.Parts after requesting a quote. Call us at +1 (972) 476-1899.
G21100B1EB1S · MICROSEMI-G21100B1EB1S Datasheet 283Kb/3P, Silicon Power Rectifier Assemblies Plate Heatsink. G21100B1EN1S · MICROSEMI-G21100B1EN1S Datasheet
Silicon Power Rectifier Assemblies Plate Heatsink. ○ Complete bridge with heatsinks - no assembly required ○ Available in many circuit configurations
G21100B1EB1S · MICROSEMI-G21100B1EB1S Datasheet 283Kb/3P, Silicon Power Rectifier Assemblies Plate Heatsink. G21100B1EN1S · MICROSEMI-G21100B1EN1S Datasheet
1100B Datasheet. 283Kb/3P. Part #: E21100B1EB1S. Manufacturer: Microsemi Corporation. Description: Silicon Power Rectifier Assemblies Plate Heatsink.
دیتاشیت G21100B1EB1S. G21100B1EB1S. حجم فایل, 296.067 کیلوبایت. نوع فایل, pdf. تعداد صفحات, 3. دانلود دیتاشیت · G21100B1EB1S. محصولات دارای دیتاشیت مشابه.
G21100B1EB1S · MICROSEMI-G21100B1EB1S Datasheet 283Kb/3P, Silicon Power Rectifier Assemblies Plate Heatsink. G21100B1EN1S · MICROSEMI-G21100B1EN1S Datasheet
G21100B1EB1S概述. SILICON, BRIDGE RECTIFIER DIODE. 硅, 桥式整流二极管. G21100B1EB1S规格参数. 参数名称, 属性值. 元件数量, 4. 状态, ACTIVE. 包装形状, RECTANGULAR.
G21100B1EB1S : Silicon Power Rectifier Assemblies Plate Heatsink. DJ25E : Proximity Sensors Inductive ABS Housing. ABS housing, Ø 50 mm, Ø 77 mm Sensing ...