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The FSX027WF from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 8 GHz, Power 23.5 to 24.5 dBm, Power(W) 0.22 to 0.28 W, Power Gain (Gp) 6.5 to 14 dB, Noise Figure 2.5 dB. Tags: Ceramic. More details for FSX027WF can be seen below.
FEATURES. Medium Power Output: P1dB=24.5dBm(Typ.)@8.0GHz. High Power Gain: G1dB=10dB(Typ.)@8.0GHz. Hermetic Metal/Ceramic Package. Proven Reliability. DESCRIPTION. The FSX027WF is a general purpose GaAs FET designed for medium power applications up to the 12GHz.
Part #: FSX027WF. Download. File Size: 112Kbytes. Page: 4 Pages. Description: General Purpose GaAs FET. Manufacturer: Eudyna Devices Inc.
- FSX027WF Download
- 4 Pages
- 112.16 Kbytes
- FSX027WF
Function. General Purpose GaAs FET. Features. Medium Power Output: P1dB=24.5dBm (Typ.)@8.0GHz. High Power Gain: G1dB=10dB (Typ.)@8.0GHz. Hermetic Metal/Ceramic Package. Proven Reliability. Description. The FSX027WF is a general purpose GaAs FET designed for medium power applications up to the 12GHz.
View and download the latest Sumitomo Electric FSX027WF PDF Datasheet including technical specifications.
- Sumitomo Electric
- $0.59 - $54,114.58
- 5
FSX027WF General Purpose Medium Power Output: P1dB=24.5dBm(Typ.)@8.0GHz High Power Gain: G1dB=10dB(Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability. DESCRIPTION. The is a general purpose GaAs FET designed for medium power applications up to the 12GHz.
Sumitomo Electric Industries, Ltd's FSX027WF is a small signal gaas rf fet. in the fet transistors, rf fets category. Check part details, parametric & specs and download pdf datasheet from datasheets.com, a global distributor of electronics components.