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  1. FQD3P50 / FQU3P50 FQD3P50 / FQU3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

  2. View FQD3P50, FQU3P50 by onsemi datasheet for technical specifications, dimensions and more at DigiKey.

  3. FQU3P50TU. Order today, ships today. FQU3P50TU – P-Channel 500 V 2.1A (Tc) 2.5W (Ta), 50W (Tc) Through Hole IPAK from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

  4. FQU3P50 Product details. These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and ...

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  5. minimize on-state resistance, provide superior switching. performance, and withstand high energy pulse in the. avalanche and comm utation mode. These devic es are well. suited for electronic lam p ballast based on c omplimentary. half bridge. Features. • -2.1A, -500V, R DS (on) = 4.9Ω @VGS = -10 V.

  6. FQD3P50/FQU3P50 500V P-Channel MOSFET. FQD3P50TM-F085. 500V P-Channel MOSFET. General Description. These P-Channel enhancement mode power field effect transistors are produced Semiconductorusing ’s ON proprietary,planar stripe, DMOS • Low Crss ( typical 9.5 pF)technology. This advanced technology has been especially tailored to minimize on ...

  7. FQP3P50 - P-Channel QFET® MOSFET. This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.