This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor's proprietary planar stripe and DMOS technology.
FQPF9N90C ; Vgs (Max). ±30V ; Input Capacitance (Ciss) (Max) @ Vds. 2730 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 68W (Tc) ; Operating Temperature. -55° ...
This N−Channel enhancement mode power MOSFET is produced using onsemi's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has ...
Dec 1, 2013 · This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology.
Single N-channel MOSFET in a 5mm x 6mm LFPAK package designed for compact and efficient designs. ... Delivers -30V drain-to-source voltage, 2.7mΩ on-resistance at ...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®'s proprietary planar stripe and DMOS technology. This advanced MOSFET ...
FQPF9N90C MOSFET. Datasheet pdf. Equivalent. Type Designator: FQPF9N90C Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...
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FQPF9N90C N-Channel 900V - 1.4 Ohm - 8A Power MOSFET Transistor. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's ...
