This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor's proprietary planar stripe and DMOS technology.
Specifications ; Vds - Drain-Source Breakdown Voltage: 500 V ; Id - Continuous Drain Current: 9 A ; Rds On - Drain-Source Resistance: 850 mOhms ; Vgs - Gate-Source ...
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FQPF9N50CF ; Input Capacitance (Ciss) (Max) @ Vds. 1030 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 44W (Tc) ; Operating Temperature. -55°C ~ 150°C (TJ).
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and. DMOS technology.
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5Pcs MOSFET 500V N-Ch Adv Q-FET Fairchild Semiconductor FQPF9N50CF 9N50CF TO-220. Series : FQPF9N50CF. Product Category : MOSFET.
$2.17
FQPF9N50CF onsemi $2.1716 - 500V 9A 850mΩ@10V,4.5A 44W 4V@250uA N Channel TO-220FPAB-3 MOSFETs ROHS datasheet, price, inventory C243116.
FQPF9N50CF 500V N-channel Mosfet . Features. 9A, 500V, RDS(on) = 0.85 @VGS 10 V Low gate charge (typical 28 nC) Low Crss (typical 24pF) Fast switching 100% ...
$2.17
FQPF9N50CF onsemi US$2.1716 - 500V 9A 850mΩ@10V,4.5A 44W 4V@250uA N Channel TO-220FPAB-3 MOSFETs ROHS datasheet, price, inventory C243116.
Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe,DMOS technology.