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FQPF7N65C — N-Channel QFET ® strength. These MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQPF7N65C / FQPF7N65CYDTU Unit VDSS Drain-Source Voltage 650 V ID Drain Current - Continuous (TC = 25°C) 7 * A - Continuous (TC = 100 ...
Overview. This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
488-FQPF7N65C. 2156-FQPF7N65C-OS. ONSONSFQPF7N65C. Standard Package. 50. Order today, ships today. FQPF7N65C – N-Channel 650 V 7A (Tc) 52W (Tc) Through Hole TO-220F-3 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
- onsemi
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View FQP7N65C, FQPF7N65C by onsemi datasheet for technical specifications, dimensions and more at DigiKey. FQP7N65C, FQPF7N65C by onsemi Datasheet | DigiKey Login or REGISTER Hello, {0} Account & Lists
FQPF7N65C Product details. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche ...
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FQP7N65C/FQPF7N65C QFET® Rev. A, May 2004 FQP7N65C/FQPF7N65C 650V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild™s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide ...
FQPF7N65C_F105 onsemi / Fairchild MOSFET 650V N-Chan Advance Q-FET C-Series datasheet, inventory, & pricing.
