FQPF1N60 ; Current - Continuous Drain (Id) @ 25°C · 900mA (Tc) ; Drive Voltage (Max Rds On, Min Rds On). 10V ; Rds On (Max) @ Id, Vgs. 11.5Ohm @ 450mA, 10V ; Vgs(th) ...
Specifications ; Vds - Drain-Source Breakdown Voltage: 600 V ; Id - Continuous Drain Current: 900 mA ; Rds On - Drain-Source Resistance: 11.5 Ohms ; Vgs - Gate- ...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced ...
$16.56
10PCS Original Genuine FQPF1N60 ; Sold by. Jiecheng Jingke Semiconductor ; Returns. Eligible for Return, Refund or Replacement within 30 days of receipt.
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FQPF1N60 MOSFET. Datasheet pdf. Equivalent. Type Designator: FQPF1N60 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...
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FQPF1N60 Features 0.9A, 600V, RDS(on) = 11.5Ω @VGS = 10 V Low gate charge ( typical 5.0 nC) Low Crss ( typical 3.0 pF) Fast switching 100% avalanche.
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These devices are well suited for high efficiency switch mode power supply. TM Features 0.9A, 600V, RDS(on) = 11.5Ω @VGS = 10 V Low gate charge ( typical 5.0 nC) ...
FQPF1N60. MOSFET N-CH 600V 900MA TO220F. MOSFET N-CH 600V 900MA TO220F, 0. Tube. -. View Details · TO-220F · FQPF17N08L. MOSFET N-CH 80V 11.2A TO220F. MOSFET N- ...