These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
2 days ago · Specifications ; Vds - Drain-Source Breakdown Voltage: 80 V ; Id - Continuous Drain Current: 9.3 A ; Rds On - Drain-Source Resistance: 210 mOhms.
FQP9N08L ; FET Type. N-Channel ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 80 V ; Current - Continuous Drain (Id) @ 25°C · 9.3A (Tc).
Part Number, FQP9N08L. Description, FQP9N08 is a Power MOSFET Transistor. Manufacturer, ON Semiconductor. Category, Power MOSFETs. Datasheet, Datasheet ...
FQP9N08L datasheet, FQP9N08L pdf, FQP9N08L data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, 80V LOGIC N-Channel MOSFET.
FQP9N08L. 80V LOGIC N-Channel MOSFET. General Description. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's ...
These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. Features.