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  1. onsemi FQP3P50 technical specifications, attributes, and parameters. Power MOSFET, P-Channel, QFET®, -500 V, -2.7 A, 4.9 Ω, TO-220. Transistor, P-channel, QFET MOSFET, -500V, -2.7A, 4.9 Ohm, -55 to 150C, TO-220 | ON Semiconductor FQP3P50.

  2. FQP3P50 – P-Channel 500 V 2.7A (Tc) 85W (Tc) Through Hole TO-220-3 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

  3. Features. • -2.7A, -500V, RDS (on) = 4.9Ω @VGS = -10 V. • Low gate charge ( typical 18 nC) • Low Crss ( typical 9.5 pF) • Fast switching. • 100% avalanche tested. • Improved dv/dt capability. Similar Part No. - FQP3P 50. More results. Similar Description - FQP3P50. More results. About Fairchild Semiconductor.

  4. Power MOSFET, P-Channel, QFET ® , -500 V, -2.7 A, 4.9 Ω, TO-220

  5. FQP3P50 onsemi / Fairchild MOSFET 500V P-Channel QFET datasheet, inventory, & pricing.

  6. www.farnell.com › datasheets › 1729172March 2013 FQP3P50

    Features. -2.7 A, -500 V, RDS(on) = 4.9 Ω (Max) @VGS = 10 V, ID = -1.35 A. Low Gate Charge (Typ. 18 nC) Low Crss (Typ. 9.5 pF) 100% Avalanche Tested. G. DS. TO-220. FQP Series. Absolute Maximum Ratings. S. ! G . . . . ! D. TC = 25°C unless otherwise noted. Thermal Characteristics. Elerical Characteristics. Symbol. Parameter.

  7. Features. •−2.1 A, −500 V, RDS(on)= 4.9 (Max.) @ VGS= −10 V, ID= −1.05 A. •Low Gate Charge (Typ. 18 nC) •Low Crss (Typ. 9.5 pF) •100% Avalanche Tested. •These Devices are Pb−Free and are RoHS Compliant. ABSOLUTE MAXIMUM RATINGS(TC= 20°C unless otherwise noted) Symbol Parameter Value Unit.