These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. Features
/ FQI90N08. FQB90N08 / FQI90N08. 80V N-Channel MOSFET. General Description ... FQB90N08 / FQI90N08. Units. VDSS. Drain-Source Voltage. 80. V. ID. Drain Current.
FQI90N08 80V N-channel QFET . These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, ...
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching perfo... Fairchild Semiconductor. FQI90N08.
FQI90N08 - 80V N-Channel MOSFET ; FDD3510H, Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mOHM P-Channel: -80V, -9.4A, 190mOHM, Fairchild ...
$5.21
Specifications ; Vds - Drain-Source Breakdown Voltage: 80 V ; Id - Continuous Drain Current: 90 A ; Rds On - Drain-Source Resistance: 16 mOhms ; Vgs - Gate-Source ...
FQI90N08: Features: • 71A, 80V, RDS(on) = 0.016Ω @VGS = 10 V• Low gate charge ( typical 84 nC)• Low Crss ( typical 200 pF)• Fast switching• 100% avalanche ...
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse ...
FQI90N08 · FAIRCHILD-FQI90N08 Datasheet 674Kb/9P, 80V N-Channel MOSFET. logo. Inchange Semiconductor ... FQP90N08 · ISC-FQP90N08 Datasheet 297Kb/2P, isc N- ...
