FQB34P10 / FQI34P10. Units. VDSS. Drain-Source Voltage. -100. V. ID. Drain Current. - Continuous (TC = 25°C). -33.5. A. - Continuous (TC = 100°C). -23.5. A. IDM.
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
Part #: FQI34P10. Download. File Size: 526Kbytes. Page: 9 Pages. Description: P-Channel QFET MOSFET. Manufacturer: Fairchild Semiconductor.
FQI34P10 datasheet, FQI34P10 pdf, FQI34P10 data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, 100V P-Channel MOSFET.
's proprietary planar stripe and DMOS technology. This advanced. MOSFET technology has been especially tailored to reduce.
Part No. FQI34P10 FQB34P10 FQB34P10TM. Description, From old datasheet system. 100V P-Channel MOSFET 100V P-Channel QFET. File Size, 714.40K / 9 Page. Maker
Full datasheet FQI34P10 manufactirer Fairchild.
FQI34P10 Datasheet(HTML) 4 Page - Fairchild Semiconductor · 1. Z θ JC(t) = 0.97. /W M ax. ℃ · 2. D uty Factor, D =t. 1/t2 · 3. T.
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FQI34P10TU I2PAK MOSFET P-CH 100V 33.5A I2PAK ; Rds On (Max) @ Id Vgs, 60 mOhm @ 16.75A 10V ; Vgs(th) (Max) @ Id, 4V @ 250?A ; Gate Charge (Qg) @ Vgs, 110nC @ 10V.