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FQB12N60 / FQI12N60. Units. VDSS. Drain-Source Voltage. 600. V. ID. Drain Current. - Continuous (TC = 25°C). 10.5. A. - Continuous (TC = 100°C). 6.7. A. IDM.
FQI12N60 from www.digikey.in
View FQB12N60, FQI12N60 by onsemi datasheet for technical specifications, dimensions and more at DigiKey ... FQI12N60. 600V N-Channel MOSFET. General Description.
FQI12N60 datasheet, FQI12N60 pdf, FQI12N60 data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, 600V N-Channel MOSFET.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced ...
Part Number, FQI12N60 ; Manufacturers, Fairchild Semiconductor ; Description, 600V N-Channel MOSFET ; Datasheet, Web View View FQI12N60 Datasheet ; Download, File ...
Part No. FQB12N60 FQI12N60 FQB12N60TMAM002 FQI12N60TU. Description, 600V N-Channel QFET 600V N-Channel MOSFET. File Size, 538.95K / 9 Page. Maker
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse ...
FQI12N60 · FAIRCHILD-FQI12N60 Datasheet 540Kb / 9P, 600V N-Channel MOSFET. FQI12N60C · FAIRCHILD-FQI12N60C Datasheet 642Kb / 9P, 600V N-Channel MOSFET.
Order today, ships today. FQB12N60TM_AM002 – N-Channel 600 V 10.5A (Tc) 3.13W (Ta), 180W (Tc) Surface Mount TO-263 (D2PAK) from onsemi.