FQI10N20C Product details ... These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS ...
/FQI10N20C. QFETTM. FQB10N20C/FQI10N20C. 200V N-Channel MOSFET. General Description. These N-Channel enhancement mode power field effect transistors are ...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
FQI10N20C - 200V N-Channel MOSFET 200V N-Channel Advance QFET C-series ; File Size, 606.12K / 9 Page ; Maker, Fairchild Semiconductor Corporation FAIRCHILD[ ...
TM Features • • • • • • 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche ...
FQB10N20C/FQI10N20C: 200V N-Channel MOSFET. Uploaded by. Djalma Mota. 0 ratings0% found this document useful (0 votes). 131 views. 9 pages. AI-enhanced title ...
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor's proprietary planar stripe and DMOS technology.
FQB10N20C/FQI10N20C · 1. Repetitive Rating : Pulse width limited by maximum junction temperature · 2. L = 3.5mH, IAS = 9.5A, VDD = 50V, RG = 25 Ω, Starting TJ = ...
FQI10N20C: Features: • 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 V• Low gate charge ( typical 20 nC)• Low Crss ( typical 40.5 pF)• Fast switching• 100% avalanche ...
