FQB9N08, FQI9N08 Datasheet by onsemi · 1. Repetitive Rating : Pulse width limited by maximum junction temperature · 2. L = 0.87mH, IAS = 9.3A, VDD = 25V, RG = ...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
FQB9N08: Features: • 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V• Low gate charge ( typical 5.9 nC)• Low Crss ( typical 13 pF)• Fast switching• 100% avalanche tested ...
Dec 8, 2000 · These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor ...
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FQB90 Datasheet. Part #: FQB90N08. Datasheet: 674Kb/9P. Manufacturer: Fairchild Semiconductor. Description: 80V N-Channel MOSFET. 2 Results.
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FET Type, MOSFET N-Channel Metal Oxide ; FET Feature, Logic Level Gate ; Drain to Source Voltage (Vdss), 80V ; Current - Continuous Drain (Id) @ 25 C · 9.3A ; Rds On ...
FQB90N08 80V N-channel QFET . These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, ...
FAIRCHILD-FQB9N08 Datasheet 547Kb/9P, 80V N-Channel MOSFET. logo. Inchange Semiconductor ... FQB9N08 · ISC-FQB9N08 Datasheet 288Kb/2P, isc N-Channel MOSFET ...
