This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been ...
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced.
FQB5N50C — N-Channel QFET. ®. MO. SFE. T. ©2003 Fairchild Semiconductor Corporation. FQB5N50C Rev. C1 www.fairchildsemi.com. 1. Absolute Maximum Ratings TC = 25 ...
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse ...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
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10PCS 5N50 FQB5N50C TO263 5A 500V new MOS FET ; Quantity. 1 sold. More than 10 available ; Item Number. 295455970134 ; UPC. Does not apply ; Accurate description.
ON Semi FQB5N50C is a Silicon MOSFET rated at 500V, 5A, 1.4Ω Rdson(max) in D2PAK-3 / TO-263-2. Datasheet. Device Parameter, Value feedback ...
Features • 4.5A, 500V, RDS(on) = 1.8Ω @VGS = 10 V • Low gate charge ( typical 13 nC) • Low Crss ( typical 8.5 pF) • Fast switching • 100% avalanche tested
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Maximum Repetitive Reverse Voltage Average Rectified Forward Current.375 " lead length = 75°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine- ...