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Overview. This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power ...
Order today, ships today. FQP50N06 – N-Channel 60 V 50A (Tc) 120W (Tc) Through Hole TO-220-3 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
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FQB50N06 Power MOSFET, N-Channel, QFET®, 60 V, 50 A, 22 mΩ, D2PAK Product Overview For complete documentation, see the data sheet. This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This
FQB50N06 / FQI50N06 ©2008 Fairchild Semiconductor Corporation Rev. A2. Oct 2008 FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
FQB50N06 / FQI50N06 — N-Channel QFET ® MOSF ET 1 www.fairchildsemi.com Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQB50N06TM / FQI50N06TU Unit VDSS Drain-Source Voltage 60 V ID Drain Current - Continuous (TC = 25°C) 50 A - Continuous (TC = 100°C) 35.4 A IDM Drain Current - Pulsed (Note 1) 200 A VGSS Gate ...
FQB50N06 www.VBsemi.com O QMMJSRRJT. TYPICAL CHARACTERISTICS (25°C unless noted) Output Characteristics Transconductance Capacitance 0 40 80 120 160 200 0 2468 10
