This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been ...
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced.
FQB19N20C / FQI19N20C. Units. VDSS. Drain-Source Voltage. 200. V. ID. Drain Current. - Continuous (TC = 25°C). 19.0. A. - Continuous (TC = 100°C). 12.1. A. IDM.
$18.11
10PCS Original Genuine 19N20C FQB19N20C TO-263 ; Sold by. Jiecheng Jingke Semiconductor ; Returns. Eligible for Return, Refund or Replacement within 30 days of ...
FQB19N20C Product details ... These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS ...
$2.48 In stock
Original new 5pcs/ 19N20C FQB19N20C 19A/200V TO-263. 1/1. 0. US $2.48/ lot. (5 Pieces). Price shown before tax. Original new 5pcs/ 19N20C FQB19N20C 19A/200V TO- ...
FQB19N20C MOSFET. Datasheet pdf. Equivalent. Type Designator: FQB19N20C Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation ...
FQB19N20C. D2-PAK. 330 mm. 24 mm. 800 units. FQB19N20C — N-Channel QFET. ®. MOSFET. ©2004 Fairchild Semiconductor Corporation. FQB19N20C Rev. C1 www.
$0.16
1pcs FQB4N50 FQB4P25 FQB5N60C FQB19N20C FQB19N10 FQB5N60 FQB7N65C FQB19N20 TO263 MOS FET TO-263 · Jingyang Solar Panel 300w 330W 400w 440W 200w 100w 110W ETFE ...
Features 19.0 A, 200 V, RDS(on) = 170 mΩ (Max.) @ VGS = 10 V, ID = 9.5 A Low Gate Charge (Typ. 40.5 nC) Low Crss (Typ. 85 pF) 100% Avalanche Tested RoHS ...