Part #: FQB17N08. Download. File Size: 614Kbytes. Page: 9 Pages. Description: 80V N-Channel MOSFET. Manufacturer: Fairchild Semiconductor.
FQB17N08, FQI17N08 Datasheet by ON Semiconductor ; VDSS Drain-Source · 80 V ; - Continuous (TC · = 100°C) 11.6 A ; VGSS Gate-Source Voltage ± 25 V.
10PCS Original Genuine FQB17N08 ; Ships from. Jiecheng Jingke Semiconductor ; Sold by. Jiecheng Jingke Semiconductor ; Returns. Eligible for Return, Refund or ...
10PCS FQB17N08 TO-263 16.5A 80V. 1/2. 0. US $3.36/ lot. (10 Pieces). Price shown before tax. 10PCS FQB17N08 TO-263 16.5A 80V. Delivery.
FAIRCHILD-FQB17N08 Datasheet 614Kb / 9P, 80V N-Channel MOSFET. logo. Inchange Semiconductor ... FQB17N08 · ISC-FQB17N08 Datasheet 333Kb / 2P, isc N-Channel ...
FQB17N08: Features: • 16.5A, 80V, RDS(on) = 0.115Ω @VGS = 10 V• Low gate charge ( typical 12 nC)• Low Crss ( typical 28 pF)• Fast switching• 100% avalanche ...
Specifications ; Id - Continuous Drain Current: 16.5 A ; Rds On - Drain-Source Resistance: 115 mOhms ; Vgs - Gate-Source Voltage: - 25 V, + 25 V ; Minimum Operating ...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced ...
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse ...
FQB17N08 / FQI17N08 January 2001 QFET FQB17N08 / FQI17N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect ...