FQA9N90C-F109 /D. FQA9N90C-F109. N-Channel QFET® MOSFET. 900 V, 9 A, 1.4 ... Essentially independent of operating temperature typical characteristics. FQA9N90C- ...
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET.
FQA9N90C-F109 ; Drive Voltage (Max Rds On, Min Rds On). 10V ; Rds On (Max) @ Id, Vgs. 1.4Ohm @ 4.5A, 10V ; Vgs(th) (Max) @ Id. 5V @ 250µA ; Gate Charge (Qg) (Max) @ ...
FQA9N90C Rev. A1. FQA9N90C 900V N-Channel MOSFET. September 2006. QFET®. FQA9N90C. 900V N-Channel MOSFET. Features. • 9A, 900V, RDS(on) = 1.4Ω @VGS = 10 V. • ...
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche ...
Number of Channels: 1 Channel ; Vds - Drain-Source Breakdown Voltage: 900 V ; Id - Continuous Drain Current: 9 A ; Rds On - Drain-Source Resistance: 1.4 Ohms.
Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
$4.13
FQA9N90C-F109 onsemi US$4.1332 - 900V 9A 1.4Ω@10V,4.5A 280W 5V@250uA N Channel TO-3P-3 MOSFETs ROHS datasheet, price, inventory C2711.
FQA9N90C ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 900 V ; Current - Continuous Drain (Id) @ 25°C · 9A (Tc) ; Drive Voltage (Max Rds On, ...