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  1. The FLM1314-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FEATURES • High Output Power: P1dB = 37.5dBm (Typ.) • High Gain: G1dB = 5.5dB (Typ.)

  2. The FLM1314-6F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 13.75 to 14.5 GHz, Power 36.5 to 37.5 dBm, Power(W) 4.47 to 5.62 W, P1dB 36.5 to 37.5 dBm, Power Gain (Gp) 5 to 5.5 dB.

  3. The FLM1314-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. EudynaÕs stringent Quality Assurance Program assures the highest reliability and consistent performance. FEATURES ¥ High Output Power: P 1dB = 37.5dBm (Typ.) ¥ High Gain: G 1dB = 5.5dB (Typ.)

  4. Eudyna Devices Inc. produces a wide range of products, including microwave and millimeter-wave transistors, amplifiers, and diodes, which are used in various applications such as wireless communications, satellite broadcasting, and radar systems.

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  5. Find the best pricing for Sumitomo Electric FLM1314-6F by comparing bulk discounts from 1 distributors. Octopart is the world's source for FLM1314-6F availability, pricing, and technical specs and other electronic parts.

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  6. The FLM1314-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. Sumitomo Electric's stringent Quality Assurance Program assures the highest reliability and consistent performance.

  7. FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm (Typ.) High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1314-6F is a power GaAs FET that is internally matched for ...