FJP9100. TO-220. 1.Base 2.Collector 3.Emitter. 1. High Voltage Power Darlington Transistor. • Built-in Resistor at Base-Emitter : R1(Typ.)=2000Ω. • Built-in ...

Part No. FJP9100 FJP9100TU. Description, NPN Silicon Darlington Transistor High Voltage Power Darlington Transistor. File Size, 68.63K / 5 Page. Maker

FJP9100 Datasheet by ON Semiconductor ; VBE(sat) Base-Emitter Saturation Voltage IC = 2A, IB = 5mA 6.0 V · Output Capacitance VCB = 10V, IE = 0, f=1MHz 110 pF ; R.

Part #: FJP9100. Download. File Size: 70Kbytes. Page: 5 Pages. Description: High Voltage Power Darlington Transistor. Manufacturer: Fairchild Semiconductor.

FJP9100 Datasheet, Equivalent, Cross Reference Search. Type Designator: FJP9100. Material of Transistor: Si. Polarity: NPN.

Details, datasheet, quote on part number: FJP9100 ; Category ; Description, FJP9100 - PNP Epitaxial Silicon Transistor ; Company, Fairchild Semiconductor.

FJP9100 Datasheet - NPN Silicon Darlington Transistor in 3-pin TO-220 package. from Fairchild Semiconductor.

Hot Selling Electronic Components FJP9100 In Stock hot ; Customizations. Customized logo. 100000 pieces(MOQ) ; Lead time. 3 days. 1+ pieces. To be negotiated.

Quick Details ; Type: Electronic components ; Place of Origin: Philippines ; D/C: New ; Package: standard ; Model Number: FJP9100.