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View FJN4307R by onsemi datasheet for technical specifications, dimensions and more at DigiKey.
FJN4307R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=47KΩ) • Complement to FJN3307R Equivalent Circuit B E C R1 R2 1. Emitter 2. Collector 3. Base 1 TO-92
FJN4307R Datasheet, Equivalent, Cross Reference Search. Type Designator: FJN4307R. Material of Transistor: Si. Polarity: Pre-Biased-PNP. Built in Bias Resistor R1 = 22 kOhm. Built in Bias Resistor R2 = 47 kOhm. Typical Resistor Ratio R1/R2 = 0.47. Maximum Collector Power Dissipation (Pc): 0.3 W. Maximum Collector-Base Voltage |Vcb|: 50 V.
Part #: FJN4307R. Download. File Size: 37Kbytes. Page: 4 Pages. Description: PNP Epitaxial Silicon Transistor. Manufacturer: Fairchild Semiconductor.
PNP Epitaxial Silicon Transistor, FJN4307R Datasheet, FJN4307R circuit, FJN4307R data sheet : FAIRCHILD, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
FJN4307R FJN4307R - PNP Epitaxial Silicon Transistor . Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=47K) Complement to FJN3307R. Absolute Maximum Ratings Ta=25°C unless otherwise noted.
This product may not be used in the following applications, unless specifically approved in writing by a Fairchild officer: (1) automotive or other transportation, (2) military/aerospace, (3) any safety critical application – including life critical medical equipment – where the failure of the Fairchild product reasonably would be expected to re...
