Symbol. Parameter. Test conditions. Min. Max. Units. BVCBO. Collector-Base Breakdown Voltage. IC = 50μA, IE = 0. 50. V. BVCEO.
* FJC1963 NPN EPITAXIAL SILICON TRANSISTOR ELECTRICAL PARAMETERS ... FJC1963 NPN + LEVEL = 1 + IS = 1.2091E-13 + NF = 0.97 + ISE = 5.89529E-12 + NE = 2.0 + ...
FJC1963 Datasheet, Equivalent, Cross Reference Search. Type Designator: FJC1963. SMD Transistor Code: FCQ_FCR_FCS. Material of Transistor: Si. Polarity: NPN.
FJC1963RTF ; Mounting Type. Surface Mount ; Package / Case. TO-243AA ; Supplier Device Package. SOT-89-3 ; Base Product Number. FJC19 ; Link. Datasheets, FJC1963.
PDF Datasheet Preview. FJC1963 NPN Epitaxial Silicon Transistor FJC1963 NPN Epitaxial Silicon Transistor • Audio Power Amplifier Applications
FJC1963 FJC1963 Audio Power Amplifier Applications Complement to FJC1308 High Collector Current Low Collector-Emitter Saturation Voltage SOT-89 1 1. Base 2.
• Complement to FJC1963 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking SOT-89. Base Collector Emitter Absolute Maximum Ratings ...